Plasma Etcher chungchanga thurin

Inductively Coupled Plasma Etch (ICPE) hi chemical leh physical process hrang hrang inzawmkhawm atanga lo chhuak a ni. A thu bulpui ber chu, vacuum leh pressure hniam hnuaiah chuan ICP RF power supply atanga radio frequency siam chu toroidal coupling coil-ah a chhuak a ni. Mixed etching gas proportion engemaw zat chu glow discharge nen a inzawm a, high-density plasma a siam chhuak a ni. Bottom electrode-a RF-in a nghawng avangin he plasma hian substrate chunglam chu a bombard a, substrate-a patterned area-a semiconductor material-a chemical bonds te chu a tichhia a ni. Heng volatile substance te hian etching gas nen an inrem a, volatile compound an siam a, chu chu substrate atang hian gas angin a inthen a, vacuum line atang hian pump chhuak a ni.