Semiconductor hmanga hman tur RF Plasma hmanrua
RF Plasma Equipment for Semiconductor Applications hi semiconductor packaging leh surface treatment process hmasawn tak tak atana siam, tihfai dan bik a ni. He hmanrua hian cabinet nghet tak, high-grade steel hmanga siam a nei a, wrinkle-texture powder coating in white hmanga tihfel a ni a, a chhe thei lo a, industrial appearance thianghlim tak a pe bawk.
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RF Plasma Equipment for Semiconductor Applications hi semiconductor packaging leh surface treatment process hmasawn tak tak atana siam, tihfai dan bik a ni. He hmanrua hian cabinet nghet tak, high-grade steel hmanga siam a nei a, wrinkle-texture powder coating in white hmanga tihfel a ni a, a chhe thei lo a, industrial appearance thianghlim tak a pe bawk. A main vacuum chamber hi high-purity aluminum plate atanga siam niin, a thickness chu 25 mm aia tlem lo a ni a, sealing performance tha tak leh long-term structural stability a tichiang a ni. Chamber chhung lam hi 450 × 450 × 450 mm a ni a, a pum puia inkharkhip one-piece electrode plate 410 × 430 mm a sei hmanga thuam a ni. Work baskets chu electrode plate-ah direct-in dah a ni a, chu chu plug-in design hmangin copper electrode base nen a inzawm a, hnathawh laiin plasma generation tha leh nghet tak a awm tih a tichiang a ni.
System hi PLC platform hmanga control a ni a, manual leh fully automatic mode hrang hrangah seamless switching a awm thei a ni. Operating parameter zawng zawng hi real time-a configure, adjust, store, leh monitor theih a ni. Integrated PID control loop hian stability leh precision a ti sang zual hle. Process recipe tam tak chu a tul angin save leh recall theih a ni a, hei hi process thlak danglam fo ngai environment tan a tangkai hle. Vacuum system hi dry pump set hmanga khalh a ni a, pumping speed chak tak a pe a, chamber hian second 100 chhungin a mamawh vacuum level a thleng tlangpui.
Technical specification pawimawh tak takte chu plasma frequency 13.56 MHz a ni a, RF power chu 0 atanga 600 W thlenga tihdanglam theih a ni a, main power supply hi 380 V AC (±10%), 50/60 Hz, three{8}}phase five-wire system-a rate a ni a, equipment power hman zawng zawng chu 3 kW aia tlem a ni. Gas flow hi 0 leh 200 ml/min inkarah chiang takin a regulate thei a, hei hian process mamawh hrang hrang a thlawp thei a ni.
A hman danah chuan he hmanrua hian semiconductor packaging-ah hmun pawimawh tak a chang a, a bik takin wire bonding (W/B) hmain. Plasma tihfai hian chip pad atanga organic residue te chu tha takin a paih chhuak a, a chunglam a activate a, wettability a ti tha bawk. Chumi avang chuan bond wire adhesion a sang a, bond strength a sang a, detachment risk pawh nasa takin a tlahniam bawk. He system hian multilayer processing leh cassette-style loading te a support a, hei hian siamtute chu production scale leh mamawh hrang hranga hmanrua chu a siam danglam thei a ni.
Chamber design nghet tak, precision control, leh flexible process theihna a neih avangin he RF plasma hmanrua hian semiconductor siamna lama high{0}}quality, repeatable surface treatment result neih theihna turin solution rintlak leh tha tak a pe a ni.
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