Plasma Cleaners hman dan bik

Plasma cleaning/etching machine hian electrode pahnih chu sealed container-ah dahin electric field siamin plasma a siam chhuak thin. Vacuum pump chu vacuum level engemaw zat vawng reng turin hman a ni. Gas chu a tlem chhoh zel chuan molecule inkar hlat zawng leh molecule emaw ion emaw zalen taka an kal theihna pawh a sang chho zel bawk. Electric field nghawng hnuaiah heng ion te hi an insu a, plasma an siam ta a ni. Heng ion te hi an reactive hle a, chemical bonds zawng zawng deuhthaw titawp thei khawpa chakna an nei a, eng surface exposed ah pawh chemical reaction a thlen thin. Gas plasma hrang hrang hian chemical property hrang hrang an nei a. Entirnan, oxygen plasma hi a oxidize nasa hle a, photoresist chu oxidize in gas a siam thei a, chu chuan cleaning effect a nei thei a ni. Corrosive gas plasma hian anisotropy tha tak a nei a, hei hian etching mamawh a phuhruk a ni. Plasma hmanga enkawlna hian glow a siam a, chuvang chuan glow discharge tih a ni.
Plasma tihfai dan hi a bik takin plasma chhunga active particle awmte "activation"-ah a innghat a, chu chuan surface stain a paih chhuak thin. Reaction mechanism lam hawi chuan plasma tihfai hian a tlangpuiin hetiang hian a ti a: inorganic gas te chu plasma state-ah an excited a; gaseous substance te chu solid surface-ah an adsorb a; adsorbed group te hian solid surface-a molecule te nen an inrem a, product molecule an siam a; product molecule te chu gas phase ah an inthen darh a; leh reaction residue te chu a chung atang chuan an paih chhuak thin.

Plasma tihfai technology-a thil langsar ber chu substrate chi hrang hrang, metal, semiconductor, oxide, leh polymer material tam zawk polypropylene, polyester, polyimide, polyvinyl chloride, epoxy, leh polytetrafluoroethylene thlengin a tifai thei a ni. A chung zawng zawng leh hmun bikte a tifai thei a, chubakah structure complex tak takte pawh a tifai thei bawk.