Plasma Etching Machine siam dan tur

ICP hmanrua hi a bik takin hmun pali a awm a, chungte chu pre-vacuum chamber, etching chamber, gas supply system leh vacuum system te an ni.

(1) Pre-vacuum chamber a awm

Pre-vacuum chamber hnathawh chu etching chamber chu vacuum level ruat saah dah a nih theih nan, pawn lam boruak (leivut, tui hnim ang chi)-in a nghawng loh nan leh room thianghlim atanga gas hlauhawm tak takte a inthen theih nan a ni. A khuhna, manipulator, transmission mechanism, isolation door, etc. atanga siam a ni.

(2) Etching awmna hmun

Etching chamber hi ICP etching hmanrua bulpui ber a ni. Etching rate, etching verticality leh roughness-ah direct impact a nei a ni. Etching chamber chhunga thil pawimawh ber berte chu: Electrode chunglam, ICP radio frequency unit, RF radio frequency unit, electrode hnuai lam system, temperature control system, etc. te an ni.

(3) Gas supply dan tur ruahmanna

Gas supply system hian etching gas hrang hrang etching chamber-ah a thawn chhuak tur a ni a, pressure controller (PC) leh mass flow controller (MFC) hmangin gas flow rate leh flow dik taka control tur a ni. Gas supply system hi gas source bottle, gas delivery pipeline, control system, mixing unit, etc. te a ni.

(4) Vacuum System hmanga siam a ni
Vacuum system pahnih a awm a, pakhat chu pre-vacuum chamber atan a ni a, pakhat chu etching chamber atan a ni. Pre-vacuum chamber chu mechanical pump hmangin a chhuak a. Pre-vacuum chamber-a vacuum level-in set value a thlen hunah chauh isolation kawngkhar chu hawn theih a ni a, wafer chu transfer theih a ni. Etching chamber chhunga vacuum awm chu mechanical pump leh molecular pump hmanga siam a ni. Etching chamber chhunga reaction atanga gas lo chhuak te pawh vacuum system hmangin a chhuah chhuak bawk.